Infineon IRFS38N20DPBF
$ 2.86
Obsolete
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Nicht autorisierte Händler
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SKU
Min.
Verpackung
Staffelpreise
Bestandsverlauf
Trend in der Bestandsentwicklung nicht verfügbar
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Lifecycle StatusObsolete (Last Updated: 7 months ago)
Verwandte Teile
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In a Pack of 5, N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK ON Semiconductor FDB52N20TM
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250V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package, D2PAK-3, RoHS
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250V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package, D2PAK-3, RoHS
Beschreibungen
Beschreibungen von Infineon IRFS38N20DPBF, die von den Distributoren bereitgestellt werden.
Transistor MOSFET Negative Channel 200 Volt 38A 3-Pin(2+Tab) D2PAK
MOSFET Transistor, N Channel, 44 A, 200 V, 54 mohm, 10 V, 5 V
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.054Ohm;ID 43A;D2Pak;PD 300W;VGS +/-30V
Single N-Channel 200 V 0.054 Ohm 60 nC HEXFET® Power Mosfet - D2PAK
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
N CHANNEL MOSFET, 200V, 44A, D2-PAK; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:44A;
Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
MOSFET, N, 200V, 44A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:44A; Resistance, Rds On:0.054ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:180A; Power Dissipation:320W; Power, Pd:320W; Resistance, Rds on @ Vgs = 10V:0.054ohm; Thermal Resistance, Junction to Case A:0.47°C/W; Voltage, Vds:200V; Voltage, Vds Max:200V; Voltage, Vgs th Max:5V
Aliasnamen des Herstellers
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- Infineon Technologies
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- INFI
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- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
Trend in der Bestandsentwicklung nicht verfügbar
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Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)43 A
Current Rating38 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance54 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time47 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.9 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance54 mΩ
Package Quantity1000
Power Dissipation3.8 W
Rds On Max54 mΩ
Recovery Time240 ns
Resistance54 mΩ
Rise Time95 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time29 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)200 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen