Infineon IRFS3307TRLPBF
$ 3.37
Obsolete
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Price @ 1000
$ 3.37
$ 5.16
Stock
113,382
38,624
Authorized Distributors
2
1
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
75 A
75 A
Threshold Voltage
-
-
Rds On Max
6.3 mΩ
6.3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
250 W
200 W
Input Capacitance
5.15 nF
5.15 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-10-13
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2022-10-15
LTD Date2023-04-15
Verwandte Teile
InfineonIRFS3307PBF
High Efficiency Synchronous Rectification in SMPS | MOSFET N-CH 75V 120A D2PAK
InfineonIRF2805STRLPBF
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
STMicroelectronicsSTB140NF75T4
STB140NF75T4 N-CHANNEL MOSFET TRANSISTOR, 120 A, 75 V, 3-PIN D2PAK
Beschreibungen
Beschreibungen von Infineon IRFS3307TRLPBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 75 V 6.3 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH 75V 130A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
200W(Tc) 20V 4V@ 150µA 180nC@ 10 V 1individualNChannel 75V 6.3mΩ@ 75A,10V 120A 5.15nF@50V D2PAK SMD mount 6.5mm*6.22mm*2.3mm
N CH POWER MOSFET, HEXFET, 75V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating130 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance6.3 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time63 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.15 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation200 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance6.3 mΩ
Package Quantity800
PackagingBulk
Power Dissipation250 W
Rds On Max6.3 mΩ
Resistance6.3 MΩ
Rise Time120 ns
Turn-Off Delay Time51 ns
Turn-On Delay Time26 ns
Voltage Rating (DC)75 V
Dimensions
Height4.572 mm
Length10.668 mm
Width9.65 mm
Compliance
Umweltklassifizierung
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen