Infineon IRFR9120NTRPBF
$ 0.496
Production
Preis und Lagerbestand
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Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRFR9120NTRPBF | 20.000 | 2K | 3d | ||||||||
| Newark | IRFR9120NTRPBF | 22 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRFR9120NTRPBF | 2.129 | 1 | |||||||||
| Future Electronics | IRFR9120NTRPBF | 4.000 | 2K | Tape & Reel | ||||||||
| Rutronik | TMOSP12372 | 2.000 | 2K | 20h |
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3-Monats-Trend: +45.65%
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-02-18
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
Verwandte Teile
Diodes Inc.ZXMN10A11KTC
ZXMN10A11K Series N-Channel 100 V 0.35 Ohm Power MOSFET Surface Mount- TO-252-3
InfineonIRFR120NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W
InfineonIRFR120NTRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W
Diodes Inc.DMN10H170SK3-13
Transistor: N-MOSFET; unipolar; 100V; 7.5A; 0.16ohm; 17W; -55+150 deg.C; SMD; TO252(DPAK)
Beschreibungen
Beschreibungen von Infineon IRFR9120NTRPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.48Ohm;ID -6.6A;D-Pak (TO-252AA);PD 40W
Single P-Channel 100 V 40 W 27 nC Hexfet Power Mosfet Surface Mount - TO-252AA
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:6.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:40W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRFR9120NTRPBF.
MOSFET, P CH, 100V, 6.6A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.6A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.48ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:40W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 6.6 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 480 / Gate-Source Voltage V = 20 / Fall Time ns = 31 / Rise Time ns = 47 / Turn-OFF Delay Time ns = 28 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 40
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: +45.65%
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Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)6.6 A
Current Rating-6.6 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance480 mΩ
Drain to Source Voltage (Vdss)-100 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Elements1
On-State Resistance480 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation39 W
Rds On Max480 mΩ
Resistance480 mΩ
Rise Time47 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time28 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-100 V
Dimensions
Height2.39 mm
Length6.7056 mm
Width6.22 mm
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRFR9120NTRPBF herunter.
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen