Diodes Inc. ZXMN10A11KTC

ZXMN10A11K Series N-Channel 100 V 0.35 Ohm Power MOSFET Surface Mount- TO-252-3
$ 0.402
Production
HerstellerseiteDatenblatt

Preis und Lagerbestand

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DistributorSKUMinPkg
DigiKeyZXMN10A11KTCDITR-ND2.5002500Tape & Reel
TME
2
ZXMN10A11KTC01
11h
AvnetZXMN10A11KTC02500
2d
Future ElectronicsZXMN10A11KTC02500Tape & Reel
RS (Formerly Allied Electronics)ZXMN10A11KTC050Bulk
14h

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für Diodes Inc. ZXMN10A11KTC herunter.

IHS

Datasheet8 SeitenVor 19 Jahren

TME

Diodes Inc SCT

Future Electronics

iiiC

Bestandsverlauf

3-Monats-Trend:
-13.60%
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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-08-01
Lifecycle StatusProduction (Last Updated: 4 months ago)

Verwandte Teile

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MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W
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InfineonIRFR120NTRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W
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InfineonIRFR120ZPBF
Single N-Channel 100 V 190 mOhm 6.9 nC HEXFET® Power Mosfet - TO-252AA
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Diodes Inc.ZXMN7A11KTC
Mosfet, N-Ch, 70V, 6.1A, To-252 Rohs Compliant: Yes |Diodes Inc. ZXMN7A11KTC
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onsemiFDD1600N10ALZ
N-Channel PowerTrench® MOSFET 100V, 6.8A, 160mΩ
Details

Beschreibungen

Beschreibungen von Diodes Inc. ZXMN10A11KTC, die von den Distributoren bereitgestellt werden.

ZXMN10A11K Series N-Channel 100 V 0.35 Ohm Power MOSFET Surface Mount- TO-252-3
Future Electronics
Trans MOSFET N-CH 100V 3.5A 3-Pin(2+Tab) DPAK T/R
Avnet
N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS
Diodes Inc SCT
MOSFET, N, 100V, D-PAK ;ROHS COMPLIANT: YES
Newark
Power Field-Effect Transistor, 2.4A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
2.11W(Ta) 20V 4V@ 250¦ÌA 5.4nC@ 10 V 1N 100V 350m¦¸@ 2.6A,10V 2.4A 274pF@50V TO-252-3 6.73mm*6.22mm*2.39mm
UnikeyIC
MOSFET N-CHANNEL 100V 3.5A DPAK
RS (Formerly Allied Electronics)
MOSFET, N, 100V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipa
element14 APAC
MOSFET, N, 100V, D-PAK; Transistor Polarity:N; Max Current Id:3.5A; Max Voltage Vds:100V; On State Resistance:0.35ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:4.06W; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:D-PAK; Case Style:DPAK; Cont Current Id:3.5A; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:100V; Typ Voltage Vgs th:4V; Voltage Vgs Rds on Measurement:10V
Farnell

Bilder

TME
RS (Formerly Allied Electronics)
iiiC

Aliasnamen des Herstellers

Diodes Inc. verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Diodes Inc. ist möglicherweise auch unter den folgenden Namen bekannt:

  • Diodes Incorporated
  • DIODE
  • DII
  • DIO
  • DIODE INC
  • DC COMPONENTS
  • DIOD
  • YENYO
  • Diodes Zetex
  • MICRO COM
  • MICRO ELECTRONIC INS
  • Diodes Inc / Zetex
  • DIODE INCORPORATED
  • DIODES ZET
  • DIODSE
  • DINC
  • Diodes Inc Inc
  • DIOINC
  • FORMOSA MS
  • DIODES INC(RoHS)
  • ZETEX (DIODES INC)
  • DIODES INC/VISHAY
  • Diodes Incorporation
  • ZETEXDIODES
  • DIODES INC/VISH
  • Pericom
  • Diodes Incorporated