Infineon IRFR120NPBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Verwandte Teile
InfineonIRFR120NTRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W
InfineonIRFR120NTRLPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W
onsemiHUF76609D3S
10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 100V 10A DPAK
Beschreibungen
Beschreibungen von Infineon IRFR120NPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W
Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-252AA
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
MOSFET Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:9.4A; On Resistance, Rds(on):210mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes
MOSFET, N, 100V, 9.1A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):210mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:39W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:9.4A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulse Current Idm:38A; SMD Marking:IRFR120N; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)9.4 A
Current Rating9.1 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance210 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance330 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance210 mΩ
Package Quantity3000
Power Dissipation39 W
Rds On Max210 mΩ
Recovery Time150 ns
Resistance210 mΩ
Rise Time23 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time32 ns
Turn-On Delay Time4.5 ns
Voltage Rating (DC)100 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen