Infineon IRFR120NPBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W

Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-252AA

N-Ch MOSFET, 100V, 9.4A, 210mΩ@5.6A,10V, 330pF@25V, DPAK (TO-252AA), SMD, 2.52mm H

100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

MOSFET Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:9.4A; On Resistance, Rds(on):210mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes

MOSFET, N, 100V, 9.1A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):210mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:39W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:9.4A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulse Current Idm:38A; SMD Marking:IRFR120N; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V