Infineon IRFR7746PBF
$ 0.394
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFR7746PBF | 75 | 18h | |||||||||
| RS (Formerly Allied Electronics) | IRFR7746PBF | 0 | 10 | Bulk | 11h | |||||||
| Farnell | IRFR7746PBF | 0 | 5 | 18h | ||||||||
| Win Source | WS-IRFR7746PBF | 333 | 240 | 19h | ||||||||
| Worldway Electronics | IRFR7746PBF | 15.043 | 7 | Tube | 18h |
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Price @ 1000
$ 0.394
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Stock
39,419
119,359
Authorized Distributors
3
4
Mount
Surface Mount, Through Hole
Surface Mount
Case/Package
DPAK
TO-252-3
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
56 A
56 A
Threshold Voltage
3.7 V
3.7 V
Rds On Max
11.2 mΩ
11.2 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
99 W
99 W
Input Capacitance
3.107 nF
3.107 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-08-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
InfineonIRFR7746TRPBF
75V Single N-Channel HEXFET Power MOSFET in a D-PAK package, DPAK-3, RoHS
InfineonIRFR3607PBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 56A;D-Pak;PD 140W;VGS +/-2
onsemiFDD10AN06A0
Trans MOSFET N-CH 60V 11A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 50A D-PAK
Beschreibungen
Beschreibungen von Infineon IRFR7746PBF, die von den Distributoren bereitgestellt werden.
HEXFET POWER MOSFET / N-Channel 75 V 56A (Tc) 99W (Tc) Surface Mount D-PAK (TO-252AA)
Single N-Channel 75 V 11.2 mOhm 59 nC HEXFET® Power Mosfet - DPAK
75V Single N-Channel HEXFET Power MOSFET in a D-PAK package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 56A I(D), 75V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 75V, 59A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 59A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant; StrongIRFET
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)56 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance11.2 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time21 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.107 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation99 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance11.2 mΩ
Package Quantity3000
Power Dissipation99 W
Rds On Max11.2 mΩ
Rise Time30 ns
Schedule B8541290080
Threshold Voltage3.7 V
Turn-Off Delay Time34 ns
Turn-On Delay Time7.9 ns
Dimensions
Height2.52 mm
Length6.73 mm
Width6.22 mm