Infineon IRFR7446PBF
Obsolete
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Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
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Dieser Teil
Alternative Teile
Price @ 1000
$ 0.443
Stock
52,109
1,113,486
Authorized Distributors
1
6
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
TO-252-3
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
56 A
56 A
Threshold Voltage
3 V
3 V
Rds On Max
3.9 mΩ
3.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
98 W
98 W
Input Capacitance
3.15 nF
3.15 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-03-28
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Verwandte Teile
InfineonIRFR7446TRPBF
40V Single N-Channel HEXFET Power MOSFET in a Lead Free D-Pak package, DPAK-3, RoHS
InfineonIPD50N04S4L08ATMA1
Power MOSFET, N Channel, 40 V, 50 A, 0.0062 ohm, TO-252 (DPAK), Surface Mount
Beschreibungen
Beschreibungen von Infineon IRFR7446PBF, die von den Distributoren bereitgestellt werden.
40V Single N-Channel HEXFET Power MOSFET in a Lead Free D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 56A I(D), 40V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 40V, 56A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Po
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)56 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance3.9 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.15 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation98 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3.9 mΩ
Package Quantity3000
Power Dissipation98 W
Rds On Max3.9 mΩ
Rise Time13 ns
Threshold Voltage3 V
Turn-Off Delay Time32 ns
Turn-On Delay Time9.8 ns
Dimensions
Height2.52 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen