Infineon IRFR5305TRPBF
$ 0.576
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRFR5305TRPBF | 116.000 | 2K | 3d | ||||||||
| Newark | IRFR5305TRPBF | 66.596 | 1 | Cut Tape | ||||||||
| Future Electronics | IRFR5305TRPBF | 242.000 | 2K | Tape & Reel | ||||||||
| Arrow Electronics | IRFR5305TRPBF | 5.953 | 1 | |||||||||
| Rutronik | TMOSP12340 | 4.000 | 2K | 3h |
Bestandsverlauf
3-Monats-Trend: +5.70%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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CAD-Modelle
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Price @ 1000
$ 0.576
$ 1.358
$ 1.358
Stock
4,322,460
179,973
179,973
Authorized Distributors
6
5
5
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
-55 V
-55 V
-55 V
Continuous Drain Current (ID)
31 A
31 A
31 A
Threshold Voltage
-4 V
-
-
Rds On Max
65 mΩ
65 mΩ
65 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
89 W
110 W
110 W
Input Capacitance
1.2 nF
1.2 nF
1.2 nF
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-02-19
Lifecycle StatusProduction (Last Updated: 4 months ago)
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P-Channel 60 V 50 mOhm Surface Mount Enhancement Mode Mosfet - TO-252
Beschreibungen
Beschreibungen von Infineon IRFR5305TRPBF, die von den Distributoren bereitgestellt werden.
Transistor MOSFET P Channel 55 Volt 31 Amp 3-Pin 2+ Tab Dpak Tape and Reel
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W
Power MOSFET, P Channel, 55 V, 31 A, 65 Milliohms, TO-252AA (DPAK), 3 Pins, Surface Mount
Single P-Channel 55V 0.065 Ohm 63 nC HEXFET® Power Mosfet - TO-252AA
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P CH, 55V, 31A, DPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-31A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:MSL 1 - Unlimited
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 31 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 65 / Gate-Source Voltage V = 20 / Fall Time ns = 63 / Rise Time ns = 66 / Turn-OFF Delay Time ns = 39 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: +5.70%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)31 A
Current Rating-31 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)-55 V
Element ConfigurationSingle
Fall Time63 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Elements1
On-State Resistance65 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation89 W
Rds On Max65 mΩ
Resistance65 mΩ
Rise Time66 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time39 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-55 V
Dimensions
Height2.3876 mm
Length6.73 mm
Width6.22 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen