Infineon IRFR3411TRPBF
$ 0.589
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRFR3411TRPBF | 1.958 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRFR3411TRPBF | 2.161 | 1 | |||||||||
| Rochester Electronics | IRFR3411TRPBF | 1.900 | 12h | |||||||||
| DigiKey | IRFR3411TRPBFCT-ND | 10.814 | 1 | Cut Tape | ||||||||
| Future Electronics | IRFR3411TRPBF | 0 | 2K | Tape & Reel |
Bestandsverlauf
3-Monats-Trend: -42.53%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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CAD-Modelle
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Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-07
Lifecycle StatusProduction (Last Updated: 4 months ago)
Verwandte Teile
InfineonIRFR3411PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 36Milliohms;ID 32A;D-Pak (TO-252AA);-55deg
InfineonIRFR3410TRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 34Milliohms;ID 31A;D-Pak (TO-252AA);-55deg
InfineonIRFR3410PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 34Milliohms;ID 31A;D-Pak (TO-252AA);-55deg
STMicroelectronicsSTD25N10F7
N-channel 100 V, 0.027 Ohm typ., 25 A, STripFET F7 Power MOSFET in DPAK package
onsemiNVD6495NLT4G
N-Channel Logic Level Power MOSFET 100V, 25A, 50mΩ Automotive Power MOSFET 100V Logic Level
Beschreibungen
Beschreibungen von Infineon IRFR3411TRPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 36Milliohms;ID 32A;D-Pak (TO-252AA);-55deg
Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-252-3
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 100V, 32A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 130W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: -42.53%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)32 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance44 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.96 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation130 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance44 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation130 W
Rds On Max44 mΩ
Resistance44 MΩ
Rise Time35 ns
Schedule B8541290080
Turn-Off Delay Time39 ns
Turn-On Delay Time11 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen