Infineon IRFR3410TRPBF
$ 0.479
Production
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Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRFR3410TRPBF | 2.000 | 2K | 2d | ||||||||
| Newark | IRFR3410TRPBF | 2.129 | 5 | Cut Tape | ||||||||
| Arrow Electronics | IRFR3410TRPBF | 5.315 | 1 | |||||||||
| Future Electronics | IRFR3410TRPBF | 974.000 | 2K | Tape & Reel | ||||||||
| Rutronik | TMOSP12287 | 2.000 | 2K | 23h |
Bestandsverlauf
3-Monats-Trend: -5.68%
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CAD-Modelle
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Beschreibungen
Beschreibungen von Infineon IRFR3410TRPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 34Milliohms;ID 31A;D-Pak (TO-252AA);-55deg
Single N-Channel 100 V 39 mOhm 56 nC HEXFET® Power Mosfet - TO-252-3
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:31A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:110W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRFR3410TRPBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 31 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 39 / Gate-Source Voltage V = 20 / Fall Time ns = 13 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: -5.68%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
0 Teile verfügbar
Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance39 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.69 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance39 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation110 W
Rds On Max39 mΩ
Resistance39 MΩ
Rise Time27 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time40 ns
Turn-On Delay Time12 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen