Infineon IRFR2905ZTRPBF
$ 0.542
EOL
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRFR2905ZTRPBF | 480 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRFR2905ZTRPBF | 2.000 | 1 | |||||||||
| Rutronik | TMOSP12282 | 2.000 | 2K | 12h | ||||||||
| DigiKey | IRFR2905ZPBFCT-ND | 4.596 | 1 | Cut Tape | ||||||||
| RS (Formerly Allied Electronics) | IRFR2905ZTRPBF | 0 | 2K | Bulk | 21h |
Bestandsverlauf
3-Monats-Trend: -14.83%
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Price @ 1000
$ 0.542
$ 1.19
$ 1.19
Stock
799,696
290,402
290,402
Authorized Distributors
6
4
4
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
TO-252-3
TO-252-3
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
42 A
42 A
42 A
Threshold Voltage
-
-
-
Rds On Max
14.5 mΩ
14.5 mΩ
14.5 mΩ
Gate to Source Voltage (Vgs)
20 V
-
-
Power Dissipation
110 W
110 W
110 W
Input Capacitance
1.38 nF
1.38 nF
1.38 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-11-24
Lifecycle StatusEOL (Last Updated: 1 week ago)
LTB Date2026-09-30
LTD Date2027-03-31
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55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Diodes Inc.DMP4015SK3Q-13
Trans MOSFET P-CH 40V 14A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 40V 14A TO252 DPAK
Beschreibungen
Beschreibungen von Infineon IRFR2905ZTRPBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 55 V 14.5 mOhm 29 nC HEXFET® Power Mosfet - TO-252AA
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 55 V, 42 A, 0.0145 ohm, TO-252AA, Surface Mount
Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
MOSFET, N-CH, 55V, 42A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0111ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 59 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 14.5 / Gate-Source Voltage V = 20 / Fall Time ns = 35 / Rise Time ns = 66 / Turn-OFF Delay Time ns = 31 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: -14.83%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Current Rating42 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance14.5 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.38 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance14.5 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation110 W
Rds On Max14.5 mΩ
Resistance14.5 MΩ
Rise Time66 ns
Schedule B8541290080
Turn-Off Delay Time31 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)55 V
Dimensions
Height2.39 mm
Length6.7056 mm
Width6.22 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen