Infineon IRFL014NPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.16Ohm;ID 1.9A;SOT-223;PD 2.1W;VGS +/-20V

Single N-Channel 55 V 0.16 Ohm 7 nC HEXFET® Power Mosfet - SOT-223

55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2.1 W

Trans MOSFET N-CH 55V 2.7A 4-Pin(3+Tab) SOT-223

Power Field-Effect Transistor, 1.9A I(D), 55V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

N Channel Mosfet, 55V, 1.9A Sot-223; Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:1.9A; On Resistance Rds(On):0.16Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

MOSFET, N, 55V, 1.9A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:55V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:1W; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Avalanche Single Pulse Energy Eas:48mJ; Capacitance Ciss Typ:190pF; Charge Qrr @ Tj = 25°C Typ:64nC; Current Iar:1.7A; Current Id Max:1.9A; Current Idss Max:1µA; Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Fall Time tf:3.3ns; Full Power Rating Temperature:25°C; Gfs Min:1.6A/V; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:120°C/W; No. of Transistors:1; On State Resistance Max:160mohm; Package / Case:SOT-223; Power Dissipation Pd:1W; Power Dissipation Pd:1W; Power Dissipation Ptot Max:2.1W; Power Dissipation on 1 Sq. PCB:1W; Pulse Current Idm:15A; Rise Time:7.1ns