Infineon IRFIZ34NPBF

55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS

Single N-Channel 55 V 0.04 Ohm 34 nC HEXFET® Power Mosfet - TO-220-3FP

Power Field-Effect Transistor, 21A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, 55V, 19A, 40 MOHM, 22.7 NC QG, TO-220 FULLPACK

Trans MOSFET N-CH 55V 21A 3-Pin(3+Tab) TO-220 Full-Pack

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 37 W

MOSFET, N, 55V, 19A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:55V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:20V; Power Dissipation Pd:31W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:21A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction to Case Thermal Resistance A:4.1°C/W; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:31W; Power Dissipation Pd:31W; Pulse Current Idm:100A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.