Infineon IRFI1310NPBF

Single N-Channel 100 V 0.036 Ohm 120 nC HEXFET® Power Mosfet - TO-220-3FP
$ 0.788
NRND
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DistributorSKUMinPkg
Avnet
2
IRFI1310NPBF1.50050
1d
NewarkIRFI1310NPBF1.3451
Arrow ElectronicsIRFI1310NPBF1531
Future Electronics
2
IRFI1310NPBF2.00050Tube
RutronikTMOSP1218210050
21h

Datenblätter und Dokumente

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IHS

Datasheet9 SeitenVor 9 Jahren
Datasheet9 SeitenVor 28 Jahren

Newark

Farnell

iiiC

DigiKey

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1998-01-01
Lifecycle StatusNRND (Last Updated: 3 months ago)
LTB Date2011-04-25
LTD Date2011-10-25

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Beschreibungen

Beschreibungen von Infineon IRFI1310NPBF, die von den Distributoren bereitgestellt werden.

Single N-Channel 100 V 0.036 Ohm 120 nC HEXFET® Power Mosfet - TO-220-3FP
Future Electronics
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, TO-220-3 FP, RoHS
Infineon SCT
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=24A) | MOSFET N-CH 100V 24A TO220FP
Win Source
Trans MOSFET N-CH 100V 24A 3-Pin(3+Tab) TO-220 Full-Pack
Avnet
MOSFET, 100V, 22A, 36 MOHM, 80 NC QG, TO-220 FULLPACK
RS (Formerly Allied Electronics)
Power Field-Effect Transistor, 24A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:45W; No. Of Pins:3Pins; Msl:-Rohs Compliant: Yes |Infineon Technologies IRFI1310NPBF.
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
MOSFET, N, 100V, 22A, TO-220FP; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:22A; Resistance, Rds On:0.036ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220FP; Termination Type:Through Hole; Current, Idm Pulse:140A; No. of Pins:3; Power Dissipation:45W; Power, Pd:45W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:2.7°C/W; Transistors, No. of:1; Voltage, Isolation:2.5kV; Voltage, Vds Max:100V
Farnell
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 24 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 36 / Gate-Source Voltage V = 20 / Fall Time ns = 40 / Rise Time ns = 56 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220FP / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 56
Distrelec

Bilder

Infineon
DKO Electronshik
Augswan
Farnell
TME
RS
Farnell
RS (Formerly Allied Electronics)
iiiC
Future Electronics
LZChips
RS
iiiC

Aliasnamen des Herstellers

Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • IRFI1310N
  • IRFI1310NPBF.
  • SP001566772