Infineon IRFH8201TRPBF
$ 0.84
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRFH8201TRPBF | 7.930 | 1 | Cut Tape | ||||||||
| Rochester Electronics | IRFH8201TRPBF | 17.347 | 21h | |||||||||
| Arrow Electronics | IRFH8201TRPBF | 4.000 | 4K | |||||||||
| DigiKey | IRFH8201TRPBFCT-ND | 7.786 | 1 | Cut Tape | ||||||||
| Future Electronics | IRFH8201TRPBF | 0 | 4K | Tape & Reel |
Bestandsverlauf
3-Monats-Trend: +0.00%
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Lieferkette
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-09
Lifecycle StatusProduction (Last Updated: 1 month ago)
Verwandte Teile
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25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
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Beschreibungen
Beschreibungen von Infineon IRFH8201TRPBF, die von den Distributoren bereitgestellt werden.
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
Infineon SCT
Single N-Channel 25 V 0.95 mOhm 56 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
Trans MOSFET N-CH 25V 49A 8-Pin QFN EP T/R
MOSFET, 25V,100A, 0.95MOHM, 56NC, PQFN5X6 SINGLE
MOSFET, N-CH, 25V, 100A, PQFN-8
Infineon NMOS HEXFET, Vds=25 V, 324 A, SuperSO8 5 x 6, , 8
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: +0.00%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance800 µΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.33 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance950 µΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation3.6 W
Rds On Max950 µΩ
Rise Time54 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time31 ns
Turn-On Delay Time27 ns
Dimensions
Height900 µm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen