Infineon IRFH7911TRPBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Bestandsverlauf
3-Monats-Trend: -15.02%
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Price @ 1000
$ 0.94
Stock
286,719
14,105
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
QFN
-
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
13 A
13 A
Threshold Voltage
-
2.35 V
Rds On Max
8.6 mΩ
8.6 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.4 W
3.4 W
Input Capacitance
1.06 nF
1.06 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-10-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Verwandte Teile
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30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package, PQFN 3X3 8L, RoHS
InfineonIRFH8337TRPBF
Single N-Channel 30 V 12.8 mOhm 10 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
InfineonIRFHM9331TRPBF
Single P-Channel 30 V 14.6 mOhm 32 nC HEXFET® Power Mosfet - PQFN 3 x 3 mm
onsemiNTL4502NT1
Non-Compliant Surface Mount 6 ns Contains Lead Tape & Reel (TR) 28 ns 11 mΩ QFN
Beschreibungen
Beschreibungen von Infineon IRFH7911TRPBF, die von den Distributoren bereitgestellt werden.
Dual N-Channel 30 V 8.6 mOhm 34 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package, PQFN 5X6 18L, RoHS
Infineon SCT
Trans MOSFET Array Dual N-CH 30V 13A/28A 18-Pin PQFN EP T/R
DUAL N CH MOSFET, 30V, PQFN-18; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.2mohm; Rds(on) Test Voltage Vgs:10V ;RoHS Compliant: Yes
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.9 mm); Dual N-Channel MOSFET; Control and Synchronous MOSFETs in one package; Low Charge Control MOSFET; Low Rdson Synchronous MOSFET; Intrinsic Schottky diode with Low Forward Voltage on Q2
MOSFET,NN CH,30V,PQFN56; Module Configuration:Dual; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:18; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:2.4W
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: -15.02%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
1 Teil verfügbar
Technische Spezifikationen
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins18
Number of Terminals6
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8.6 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.06 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage30 V
Min Operating Temperature-50 °C
Nominal Vgs2.35 V
Number of Channels2
Number of Elements1
On-State Resistance3 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation3.4 W
Rds On Max8.6 mΩ
Resistance8.6 MΩ
Schedule B8541290080
Dimensions
Height1 mm
Length5.9944 mm
Width5 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen