Infineon IRFH5250TR2PBF
$ 0.81
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFH5250TR2PBF | 0 | 800 | Bulk | 1d | |||||||
| Avnet | IRFH5250TR2PBF | 0 | 800 | 1d | ||||||||
| Farnell | IRFH5250TR2PBF | 0 | 1 | Cut Tape | 7h | |||||||
| Microchip USA | IRFH5250TR2PBF | 222 | 150 | Tray | 2h | |||||||
| Win Source | WS-IRFH5250TR2PBF | 5.110 | 18 | 9h |
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-09-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
Verwandte Teile
InfineonIRFHS8342TRPBF
Single N-Channel 30 V 16 mOhm 4.2 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
InfineonIRFHM830TRPBF
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
Beschreibungen
Beschreibungen von Infineon IRFH5250TR2PBF, die von den Distributoren bereitgestellt werden.
MOSFET N-CH 25V 45A PQFN / N-Channel 25 V 45A (Ta), 100A (Tc) Surface Mount 8-PQFN (5x6)
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
Trans MOSFET N-CH 25V 45A 8-Pin QFN T/R
MOSFET, N CH, 25V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):900µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:100A; Package / Case:QFN; Power Dissipation Pd:3.6W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)45 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.75 mΩ
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.93 nF
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
PackagingCut Tape
Power Dissipation3.6 W
Rds On Max1.15 mΩ
Recovery Time41 ns
Rise Time46 ns
TerminationSMD/SMT
Threshold Voltage1.8 V
Turn-Off Delay Time30 ns
Turn-On Delay Time28 ns
Dimensions
Height838.2 µm
Length5.9944 mm
Width5 mm
Compliance
Umweltklassifizierung
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen