Infineon IRF7473PBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 22MILLIOHMS; Id 6.9A; SO-8; Pd 2.5W; Vgs +/-20
$ 1.07
Obsolete
HerstellerseiteDatenblatt

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
DistributorSKUMinPkg
RS (Formerly Allied Electronics)IRF7473PBF05Bulk
5h
Farnell
2
IRF7473PBF01
12h
Win SourceWS-IRF7473PBF3.20015
13h
Worldway ElectronicsIRF7473PBF17.6287Tube
1d
ICPartonlineIRF7473PBF21.514
4d

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRF7473PBF herunter.

Farnell

Datasheet8 SeitenVor 21 Jahren

IHS

element14 APAC

RS (Formerly Allied Electronics)

iiiC

Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-11-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15

Verwandte Teile

InfineonIRF7495PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;SO-8;PD 2.5W;VGS +/-20
Details
onsemiFDS3672
MOSFET N-CH 100V 7.5A 8-SOIC / Trans MOSFET N-CH 100V 7.5A 8-Pin SOIC T/R
Details
InfineonIRF7853PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14.4 Milliohms;ID 8.3A;SO-8;PD 2.5W;gFS 11S
Details
InfineonIRF7488PBF
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 24 Milliohms;ID 6.3A;SO-8;PD 2.5W;VGS +/-20V
Details
onsemiFDS86141
N-Channel Power Trench® MOSFET 100V, 7A, 23mΩ
Details
onsemiFDS3572
N-Channel 80 V 16 mOhm 2.5 W Surface Mount PowerTrench MosFet - SOIC-8
Details

Beschreibungen

Beschreibungen von Infineon IRF7473PBF, die von den Distributoren bereitgestellt werden.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 22Milliohms;ID 6.9A;SO-8;PD 2.5W;VGS +/-20
RS (Formerly Allied Electronics)
Single N-Channel 100 V 26 mOhm 61 nC HEXFET® Power Mosfet - SOIC-8
Future Electronics
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 6.9A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
IHS
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:100V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.9A; External Length / Height:1.75mm; External Width:4.05mm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:55A; Row Pitch:6.3mm; SMD Marking:F7473; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
element14 APAC
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Infineon

Bilder

Infineon
DKO Electronshik
TME
element14
International Rectifier
Rochester Electronics
iiiC

Aliasnamen des Herstellers

Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • IRF7473.PBF
  • IRF7473PBF.
  • SP001572110