Infineon IRF7424TRPBF
$ 0.491
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | IRF7424PBFCT-ND | 2.171 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRF7424TRPBF | 5.500 | 1 | |||||||||
| RS (Formerly Allied Electronics) | IRF7424TRPBF | 0 | 4K | Bulk | 2h | |||||||
| Avnet | 39M3571 | 0 | 1 | 15h | ||||||||
| Farnell | IRF7424TRPBF | 11.295 | 5 | Cut Tape | 13h |
Bestandsverlauf
3-Monats-Trend: -29.71%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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CAD-Modelle
Laden Sie Infineon IRF7424TRPBF Symbol-, Footprint- und 3D-STEP-Modelle von unseren zuverlässigen Partnern herunter.
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|---|---|---|---|
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Price @ 1000
$ 0.491
$ 0.351
Stock
608,011
1,523,196
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOP
Drain to Source Voltage (Vdss)
-30 V
30 V
Continuous Drain Current (ID)
11 A
12 A
Threshold Voltage
-2.5 V
-
Rds On Max
13.5 mΩ
14 mΩ
Gate to Source Voltage (Vgs)
20 V
25 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
4.03 nF
1.802 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-10-04
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2025-12-31
LTD Date2026-12-31
Verwandte Teile
InfineonIRF7424PBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 13.5 Milliohms;ID -11A;SO-8;PD 2.5W;gFS 17S
VishaySI4425DDY-T1-GE3
SI4425DDY Series 30 V 9.8 mOhm 80 nC P-Channel Surface Mount Mosfet - SOIC-8
Beschreibungen
Beschreibungen von Infineon IRF7424TRPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 13.5 Milliohms;ID -11A;SO-8;PD 2.5W;gFS 17S
Single P-Channel 30V 22 mOhm 110 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 11A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
Power MOSFET, P Channel, 30 V, 11 A, 0.0135 ohm, SOIC, Surface Mount
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
P CHANNEL MOSFET, 11A; Transistor Polarity: P Channel; Continuous Drain Current Id: -11A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0135ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage V
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-11A; Package/Case:8-SOIC; Power Dissipation, Pd:2.5W; Drain Source On Resistance @ 10V:13.5mohm; Drain Source On Resistance @ 4.5V:22mohm ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: -29.71%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)11 A
Current Rating-11 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)-30 V
Fall Time76 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.03 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-2.5 V
Number of Channels1
Number of Elements1
On-State Resistance13.5 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max13.5 mΩ
Resistance13.5 MΩ
Rise Time23 ns
Schedule B8541290080
Threshold Voltage-2.5 V
Turn-Off Delay Time150 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen