Infineon IRF7424PBF

MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 13.5 Milliohms;ID -11A;SO-8;PD 2.5W;gFS 17S

Single P-Channel 30 V 22 mOhm 110 nC HEXFET® Power Mosfet - SOIC-8

P-channel MOSFET Transistor, 11 A 30 V, 8-Pin SOIC

IRF7424PBF,MOSFET, P-CHANNEL, -30V, -11A, 13.5 MOHM, 75 NC Q

-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

HEXFET POWER MOSFET Power Field-Effect Transistor, 11A I(D), 30V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

MOSFET, P, SO-8; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-30V; Current, Id Cont:11A; Resistance, Rds On:0.0135ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-2.5V; Case Style:SOIC; Termination ;RoHS Compliant: Yes

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-2.5V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-11A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:47A; SMD Marking:F7424; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V