Infineon IRF7317PBF

Dual N/P-Channel 20 V 0.029/0.058 Ohm 18/19 nC HEXFET® Power Mosfet - SOIC-8

Trans MOSFET N/P-CH 20V 6.6A/5.3A 8-Pin SOIC Tube

20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

HEXFET POWER MOSFET Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:6.6A; On Resistance, Rds(on):29mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes

MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Cont Current Id N Channel 2:6.6A; Cont Current Id P Channel:5.3A; Current Id Max:6.6A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance N Channel Max:29mohm; On State Resistance P Channel Max:58mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:26A; Pulse Current Idm N Channel 2:26A; Pulse Current Idm P Channel:21A; Row Pitch:6.3mm; SMD Marking:F7317; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:700mV; Voltage Vgs th Max:3V