Infineon IRF6621TR1PBF
$ 2.55
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF6621TR1PBF | 0 | 1K | Bulk | 2d | |||||||
| Farnell | IRF6621TR1PBF | 0 | 1 | 5h | ||||||||
| Win Source | WS-IRF6621TR1PBF | 16.000 | 115 | 11h | ||||||||
| Worldway Electronics | IRF6621TR1PBF | 10.299 | 7 | Tape & Reel | 10h | |||||||
| Aztech | IRF6621TR1PBF | 6.145 | 6h |
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-06-06
Lifecycle StatusProduction (Last Updated: 4 months ago)
Verwandte Teile
InfineonIRF6721STR1PBF
Power Field-Effect Transistor, 60A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Beschreibungen
Beschreibungen von Infineon IRF6621TR1PBF, die von den Distributoren bereitgestellt werden.
Trans MOSFET N-CH Si 30V 12A 6-Pin Direct-FET SQ T/R / MOSFET N-CH 30V 12A DIRECTFET
30V SINGLE N-CHANNEL HEXFET POWER MOSFET, DIRECTFET SQ PKG
N CH MOSFET, 30V, 9.6A DIRECTFET SQ
Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:9.6A; On Resistance, Rds(on):9.1mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET SQ ;RoHS Compliant: Yes
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
MountSurface Mount
Number of Pins5
Number of Terminals2
Technical
Continuous Drain Current (ID)12 A
Current Rating12 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9.1 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time4.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.46 nF
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Nominal Vgs1.8 V
Number of Elements1
Power Dissipation42 W
Rds On Max9.1 mΩ
Rise Time14 ns
Threshold Voltage1.8 V
Turn-Off Delay Time16 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)20 V
Dimensions
Height506 µm
Length4.826 mm
Width3.95 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen