onsemi FDD6680AS

N-Channel PowerTrench® SyncFET™ MOSFET, 30V, 55A, 10.5mΩ
$ 0.594
Obsolete
HerstellerseiteDatenblatt

Preis und Lagerbestand

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DistributorSKUMinPkg
Verical
2
FDD6680AS6.993472
Rochester Electronics
2
FDD6680AS9.341
2h
element14 APAC
2
FDD6680AS01Cut Tape
15h
Farnell
2
FDD6680AS01Cut Tape
1d
Win SourceWS-FDD6680AS24.20075
2h

Datenblätter und Dokumente

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Technical Drawing1 SeiteVor 3 Jahren

IHS

Future Electronics

onsemi

Farnell

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Alternative Teile

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onsemiFDD6680AS
onsemiFDD6680S
Price @ 1000
$ 0.594
$ 1.328
Stock
245,339
236,256
Authorized Distributors
4
3
Mount
Surface Mount
-
Case/Package
TO-252
TO-252
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
55 A
55 A
Threshold Voltage
1.4 V
-
Rds On Max
10.5 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.3 W
60 W
Input Capacitance
1.2 nF
-

Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-02-24
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-02-17
LTD Date2021-08-17
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Beschreibungen

Beschreibungen von onsemi FDD6680AS, die von den Distributoren bereitgestellt werden.

N-Channel PowerTrench® SyncFET™ MOSFET, 30V, 55A, 10.5mΩ
onsemi
N-Channel 30 V 55 A 10.5 mO Surface Mount PowerTrench Mosfet - DPAK
Future Electronics
Power Field-Effect Transistor, 55A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IHS
MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:60mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:55A; Package / Case:DPAK; Power Dissipation Pd:60mW; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
element14 APAC
The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.
Fairchild Semiconductor

Bilder

TME
element14 APAC
iiiC
iiiC
Rochester Electronics

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

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  • ON SEMICONDUCTO
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  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd