Infineon IRF6215PBF

Single P-Channel 150 V 0.29 Ohm 66 nC HEXFET® Power Mosfet - TO-220-3

-150 Volt -13 Amp Single P-Channel A224 HEXFET Power MOSFET TO-220AB

MOSFET, Power; P-Channel; 0.29 Ohms @ -10 V, -6.6 A; 20 V (Max.); 62 degC/W

-150V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Trans MOSFET P-CH 150V 13A 3-Pin(3+Tab) TO-220AB

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: P Power dissipation: 110 W

Power Field-Effect Transistor, 11A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:150V; On Resistance Rds(on):290mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:110W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:310mJ; Current Id Max:-13A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Power Dissipation Ptot Max:110W; Pulse Current Idm:44A; Termination Type:Through Hole; Voltage Vds:150V; Voltage Vds Typ:-150V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V