Infineon IRF3315PBF

Single N-Channel 150 V 0.082 Ohm 95 nC HEXFET® Power Mosfet - TO-220-3

Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A) | MOSFET N-CH 150V 27A TO-220AB

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

MOSFET, 150V, 21A, 70 mOhm, 63.3 nC Qg, TO-220AB

Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 136 W

Power Field-Effect Transistor, 27A I(D), 150V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

MOSFET, N, 150V, 21A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:150V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:136W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:27A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.6°C/W; Package / Case:TO-220AB; Power Dissipation Pd:136W; Power Dissipation Pd:136W; Pulse Current Idm:108A; Termination Type:Through Hole; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V