Infineon IRF4905LPBF
$ 1.22
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Min.
Verpackung
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3-Monats-Trend: +79.85%
CAD-Modelle
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CAD-Modelle
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Price @ 1000
$ 1.22
$ 1.77
Stock
259,207
80,850
Authorized Distributors
6
2
Mount
Through Hole
Through Hole
Case/Package
TO-262
TO-262
Drain to Source Voltage (Vdss)
-55 V
-55 V
Continuous Drain Current (ID)
42 A
42 A
Threshold Voltage
4 V
-
Rds On Max
20 mΩ
20 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
170 W
170 W
Input Capacitance
3.5 nF
3.5 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-08-25
Lifecycle StatusProduction (Last Updated: 2 months ago)
Verwandte Teile
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MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0165Ohm;ID 53A;TO-262;PD 107W;VGS +/-20V
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InfineonIRF1405LPBF
MOSFET N-CH 55V 131A TO262 N-Channel 55 V 131A (Tc) 200W (Tc) Through Hole TO-262
Beschreibungen
Beschreibungen von Infineon IRF4905LPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 20Milliohms;ID -70A;TO-262;PD 170W;gFS 19S
Transistor MOSFET P Channel 55 Volt 74 Amp 3-Pin 3+ Tab TO-262
Infineon Technologies P-channel HEXFET power MOSFET, -55 V, -42 A, TO-262, IRF4905LPBF
Single P-Channel 55 V 20 mOhm 180 nC HEXFET® Power Mosfet - TO-262-3
MOSFET P-CH 55V 42A TO262 P-Channel 55 V 42A (Tc) 170W (Tc) Through Hole TO-262
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Infineon PChannel EnhancedMOSTube HEXFETseries, Vds=55 V, 74 A, I2PAK (TO-262)encapsulation, Through hole mounting, 3Pin
MOSFET, P CH, 55V, 74A, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:74A; Drain Source Voltage Vds:55V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-262AB; Current Id Max:-74A; Package / Case:TO-262; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:260A; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -42 / Drain-Source Voltage (Vds) V = -55 / ON Resistance (Rds(on)) mOhm = 20 / Gate-Source Voltage V = 20 / Fall Time ns = 64 / Rise Time ns = 99 / Turn-OFF Delay Time ns = 51 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = I2PAK / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 170
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: +79.85%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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1 Teil verfügbar
Technische Spezifikationen
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)42 A
Current Rating-74 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)-55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time64 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.5 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance20 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation170 W
Rds On Max20 mΩ
Rise Time99 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time51 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)-55 V
Dimensions
Height15.1 mm
Length10.668 mm
Width4.826 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen