Infineon IRF3315SPBF
Obsolete
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Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
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Price @ 1000
$ 2.08
Stock
89,864
101,785
Authorized Distributors
1
1
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
150 V
150 V
Continuous Drain Current (ID)
21 A
21 A
Threshold Voltage
4 V
-
Rds On Max
82 mΩ
82 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
94 W
94 W
Input Capacitance
1.3 nF
1.3 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-08-28
Lifecycle StatusObsolete (Last Updated: 7 months ago)
Verwandte Teile
InfineonAUIRF3315S
MOSFET, N-CH, 150V, 21A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
InfineonIRFS23N15DTRLP
N CH SMPS MOSFET, HEXFET, 150V, 23A, D2PAK; Transistor Polarity:N Channel; Conti
Beschreibungen
Beschreibungen von Infineon IRF3315SPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.082Ohm;ID 21A;D2Pak;PD 94W;VGS +/-20V;-55
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) D2PAK
HEXFET POWER MOSFET Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 150V, 21A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):82mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:84W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:21A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.6°C/W; Package / Case:D2-PAK; Power Dissipation Pd:84W; Power Dissipation Pd:84W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:84A; SMD Marking:IRF3315S; Termination Type:SMD; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
Trend in der Bestandsentwicklung nicht verfügbar
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1 Teil verfügbar
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)21 A
Current Rating21 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance82 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time38 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation94 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance82 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation94 W
Rds On Max82 mΩ
Rise Time32 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time49 ns
Turn-On Delay Time9.6 ns
Voltage Rating (DC)150 V
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen