Infineon IRF3007SPBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 1.115
Stock
91,897
201,586
Authorized Distributors
1
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
62 A
62 A
Threshold Voltage
-
-
Rds On Max
12.6 mΩ
12.6 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
120 W
120 W
Input Capacitance
3.27 nF
3.27 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-09-19
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
InfineonIRFS3607TRLPBF
Power MOSFET, N Channel, 75 V, 80 A, 0.00734 ohm, TO-263 (D2PAK), Surface Mount
InfineonIRF2807ZSTRLPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.5Milliohms;ID 75A;D2Pak;PD 170W;VGS +/-20
InfineonIRFS3607PBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 80A;D2Pak;PD 140W;VGS +/-2
STMicroelectronicsSTB75NF75T4
N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in D2PAK package
Beschreibungen
Beschreibungen von Infineon IRF3007SPBF, die von den Distributoren bereitgestellt werden.
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 75V 62A 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 62A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)62 A
Current Rating62 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance12.6 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time49 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.27 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation120 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance12.6 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation120 W
Rds On Max12.6 mΩ
Rise Time80 ns
Turn-Off Delay Time55 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)75 V
Dimensions
Height4.572 mm
Length10.668 mm
Width9.65 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen