Infineon IRF2805SPBF

MOSFET N-CH 55V 135A D2PAK N-Channel 55 V 135A (Tc) 200W (Tc) Surface Mount D2PAK

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Single N-Channel 55 V 4.7 mOhm 150 nC HEXFET® Power Mosfet - D2PAK

Trans MOSFET N-CH 55V 135A 3-Pin(2+Tab) D2PAK

Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

200W(Tc) 20V 4V@ 250µA 230nC@ 10 V 1individualNChannel 55V 4.7mΩ@ 104A,10V 135A 5.11nF@25V D2PAK SMD mount 6.5mm*6.22mm*2.3mm

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

MOSFET, N, 55V, 135A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:135A; Drain Source Voltage Vds:55V; On Resistance Rds(on):4.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:135A; Junction to Case Thermal Resistance A:0.75°C/W; On State resistance @ Vgs = 10V:4.7mohm; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:700A; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V