Infineon IRF1310NSPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.036 Ohm; Id 42A; D2PAK; Pd 160W; Vgs +/-20V
$ 2.51
Obsolete
HerstellerseiteDatenblatt

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
DistributorSKUMinPkg
RS (Formerly Allied Electronics)IRF1310NSPBF01Bulk
2h
FarnellIRF1310NSPBF05
13h
Win SourceWS-IRF1310NSPBF1.70540
14h
Worldway ElectronicsIRF1310NSPBF6.1147Tube
8h
AnlinkdaIRF1310NSPBF41.239
2d

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRF1310NSPBF herunter.

IHS

Datasheet12 SeitenVor 22 Jahren

Newark

element14 APAC

RS (Formerly Allied Electronics)

Jameco

Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-08-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15

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Beschreibungen

Beschreibungen von Infineon IRF1310NSPBF, die von den Distributoren bereitgestellt werden.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;D2Pak;PD 160W;VGS +/-20V
RS (Formerly Allied Electronics)
Single N-Channel 100 V 0.036 Ohm 110 nC HEXFET® Power Mosfet - D2PAK
Future Electronics
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 1.0uF 35volts *Derate Voltage/Temp
Utmel Electronic
Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK
Avnet
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 3.8 W
Distrelec
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IHS
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Infineon
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
Newark
MOSFET, N, 100V, 42A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:42A; Resistance, Rds On:0.036ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:140A; Power Dissipation:160W; Power Dissipation on 1 Sq. PCB:3.8W; Power, Pd:160W; SMD Marking:IRF1310NS; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.95°C/W; Voltage, Vds:100V; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V
Farnell

Bilder

Infineon
Farnell
Distrelec
TME
RS
Farnell
Distrelec
Jameco
RS (Formerly Allied Electronics)
iiiC

Aliasnamen des Herstellers

Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • IRF1310NSPBF.
  • SP001561414