Infineon IPW90R500C3FKSA1

MOSFET N-CH 900V 11A TO247-3 / N-Channel 900 V 11A (Tc) 156W (Tc) Through Hole PG-TO247-3-1
Obsolete
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DistributorSKUMinPkg
FarnellIPW90R500C3FKSA101
1h
Win SourceWS-IPW90R500C3FKSA13.60013
2h
Worldway ElectronicsIPW90R500C3FKSA110.0717Tube
1h
AztechIPW90R500C3FKSA16.445
22h
SHENGYU ELECTRONICSIPW90R500C3FKSA16.3601
2d

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für Infineon IPW90R500C3FKSA1 herunter.

IHS

Datasheet11 SeitenVor 17 Jahren

element14 APAC

Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-02-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-12-31
LTD Date2021-06-30

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Beschreibungen

Beschreibungen von Infineon IPW90R500C3FKSA1, die von den Distributoren bereitgestellt werden.

MOSFET N-CH 900V 11A TO247-3 / N-Channel 900 V 11A (Tc) 156W (Tc) Through Hole PG-TO247-3-1
Win Source
Power Field-Effect Transistor, 11A I(D), 900V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
IHS
MOSFET, N, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 0.39ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation P
Farnell
900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting
Infineon

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Farnell
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