Infineon BSP296NH6327XTSA1
$ 0.244
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | BSP296NH6327XTSA1 | 10.000 | 1K | 3d | ||||||||
| Newark | BSP296NH6327XTSA1 | 4.505 | 1 | Cut Tape | ||||||||
| Future Electronics | BSP296NH6327XTSA1 | 1.000 | 1K | Tape & Reel | ||||||||
| Arrow Electronics | BSP296NH6327XTSA1 | 5.833 | 1 | |||||||||
| Rutronik | TMOSS6558 | 9.000 | 1K | 18h |
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3-Monats-Trend: +21.00%
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Price @ 1000
$ 0.244
$ 0.332
$ 0.332
Stock
1,372,930
264,299
264,299
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-223
TO-261-4
TO-261-4
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
1.2 A
1.2 A
1.2 A
Threshold Voltage
1.4 V
-
-
Rds On Max
600 mΩ
600 mΩ
600 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
1.8 W
1.8 W
1.8 W
Input Capacitance
114.8 pF
152.7 pF
152.7 pF
Lieferkette
Country of OriginAustria, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-04-04
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
Verwandte Teile
onsemiIRLM110ATF
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 1.5A Tc 1.5A 2.2W 8ns
VishayIRLL110TRPBF
IRLL110TRPBF N-CHANNEL MOSFET TRANSISTOR, 1.5 A, 100 V, 3 + TAB-PIN SOT-223
InfineonBSP372NH6327XTSA1
Power MOSFET, N Channel, 100 V, 1.8 A, 230 Milliohms, SOT-223, 4 Pins, Surface Mount
Beschreibungen
Beschreibungen von Infineon BSP296NH6327XTSA1, die von den Distributoren bereitgestellt werden.
Power MOSFET, N Channel, 100 V, 1.2 A, 600 Milliohms, SOT-223, 4 Pins, Surface Mount
Trans MOSFET N-CH 100V 1.2A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
Mosfet, N-Ch, 100V, 1.2A, Sot-223 Rohs Compliant: Yes |Infineon Technologies BSP296NH6327XTSA1
MOSFET, N-CH, 100V, 1.2A, SOT-223-4; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.329ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4
Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.2 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Voltage V = 20 / Fall Time ns = 5.2 / Rise Time ns = 3.8 / Turn-OFF Delay Time ns = 18.4 / Turn-ON Delay Time ns = 3.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: +21.00%
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Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight250.212891 mg
Technical
Continuous Drain Current (ID)1.2 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time21.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance114.8 pF
Max Dual Supply Voltage100 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Manufacturer Package IdentifierPG-SOT223-4
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance600 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation1.8 W
Rds On Max600 mΩ
Rise Time7.9 ns
Schedule B8541290080
Threshold Voltage1.4 V
Turn-Off Delay Time18.4 ns
Turn-On Delay Time3.5 ns
Dimensions
Height1.8 mm
Length6.5 mm
Width3.5 mm
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Compliance
Umweltklassifizierung
Halogen FreeHalogen Free
Lead FreeLead Free
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen