Infineon AUIRL1404ZS
$ 1.31
Obsolete
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Nicht-autorisierte lagerhaltende Distributoren
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-08-26
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
Verwandte Teile
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Beschreibungen
Beschreibungen von Infineon AUIRL1404ZS, die von den Distributoren bereitgestellt werden.
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 40V 180A Automotive 3-Pin(2+Tab) D2PAK Tube
Single N-Channel 40 V 5.9 mOhm 75 nC Automotive HEXFET® Power Mosfet - D2PAK
Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET,W DIODE,N CH,40V,160A,D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:16V
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Technische Spezifikationen
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)160 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance3.1 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time49 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance5.08 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance3.1 mΩ
Package Quantity1000
Power Dissipation200 W
Rds On Max3.1 mΩ
Resistance5.9 MΩ
Rise Time180 ns
Threshold Voltage1.4 V
Turn-Off Delay Time30 ns
Turn-On Delay Time19 ns
Dimensions
Height9.65 mm
Length10.67 mm
Width4.83 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen