Infineon AUIRF7379Q
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-04-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-03-31
LTD Date2023-09-30
Verwandte Teile
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Dual N & P Channel 30 V 5.4 A 1.25 W Surface Mount Complementary Mosfet - SOIC-8
Beschreibungen
Beschreibungen von Infineon AUIRF7379Q, die von den Distributoren bereitgestellt werden.
Trans MOSFET N/P-CH Si 30V 4.8A/4.3A Automotive 8-Pin SOIC T/R
Automotive Q101 30V Dual N and P-Channel HEXFET Power MOSFET in a SO-8 Package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 4.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, NP CH, 30V, 4.8/4.3A, SO8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Continuous Drain Current Id, N Channel:5.8A; Continuous Drain Current Id, P Channel:-4.3A; Drain Source Voltage Vds, N Channel:30V; Drain Source Voltage Vds, P Channel:-30V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.038ohm; On Resistance Rds(on), P Channel:0.070ohm; Power Dissipation Pd:2.5W
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.8 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance520 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max45 mΩ
Threshold Voltage1 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen