Infineon IRF7303PBF
$ 0.211
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRF7303PBF | 2.176 | 8334 | 15h | ||||||||
| Rochester Electronics | IRF7303PBF | 5 | 13h | |||||||||
| Flip Electronics | IRF7303PBF | 2.176 | 3d | |||||||||
| RS (Formerly Allied Electronics) | IRF7303PBF | 0 | 3800 | Bulk | 2h | |||||||
| Farnell | IRF7303PBF | 0 | 5 | 13h |
Bestandsverlauf
3-Monats-Trend: +0.00%
CAD-Modelle
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CAD-Modelle
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|---|---|---|---|
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-08-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
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Beschreibungen
Beschreibungen von Infineon IRF7303PBF, die von den Distributoren bereitgestellt werden.
Transistor MOSFET Negative Channel 30 Volt 4.9A 8-Pin SOIC T/R
Dual N-Channel 30 V 0.08 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8
2W 20V 1V@ 250¦ÌA 25nC@ 10V 2N 30V 50m¦¸@ 2.4A,10V 4.9A 520pF@25V SOIC-8 1.75mm
HEXFET POWER MOSFET Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:4.9A; On Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, DUAL, NN, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.9A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; Row Pitch:6.3mm; SMD Marking:F7303; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: +0.00%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.9 A
Current Rating4.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time7.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance520 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Elements2
On-State Resistance50 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2 W
Rds On Max50 mΩ
Recovery Time71 ns
Resistance50 mΩ
Rise Time21 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time22 ns
Turn-On Delay Time6.8 ns
Voltage Rating (DC)30 V
Dimensions
Height1.5 mm
Length5 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen