Infineon 2N6798

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package, TO-205AF-3

N Channel Mosfet, 200V, 5.5A, To-205Af

5.5 A 200 V 0.42 ohm N-CHANNEL Si POWER MOSFET TO-205

HEXFET TRANSISTOR, HiRel - 200V, 5.5A, 0.400 ohm

Trans MOSFET N-CH 200V 22A 3-Pin TO-39

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

N CH MOSFET, 200V, 5.5A, TO-205AF; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-39; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:54mJ; Current Id Max:5.5A; Current Temperature:25°C; External Length / Height:18.03mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Length:14.22mm; No. of Transistors:1; Package / Case:TO-39; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:22A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Weight:0.0024kg