Future Electronics Diskrete Halbleiter

IRLML6402TRPBF

Mosfet, Power; P-ch; Vdss -20V; Rds(on) 0.065 Ohm; Id -3.7A; MICRO3; Pd 1.3W; Vgs +/-12V

2N7002,215

Power MOSFET, N Channel, 60 V, 300 mA, 2.8 Ohm , TO-236AB (SOT-23), 3 Pins, Surface Mount

IRLML6401TRPBF

Mosfet, Power; P-ch; Vdss -12V; Rds(on) 0.05 Ohm; Id -4.3A; MICRO3; Pd 1.3W; Vgs +/-8V

MBR0540T1G

Diode, Schottky Barrier, Vr 40V, If 0.5A, Pkg SOD-123, Vf 0.51V, Tj +150DEGC, Cs 5.5A

BAS316,115

DIODE GEN PURP 100V 250MA SOD323 / Diode Switching 100V 0.25A Automotive 2-Pin SOD-323 T/R

PMEG6010CEJ,115

Rectifier Diode Schottky 1A Automotive 2-Pin SOD-323F T/R / DIODE SCHOTTKY 60V 1A SOD323F

BAT54SLT1G

Diode, Schottky Barrier, Fast, Vr 30V, If 200MA, Pkg SOT-23 (TO-236), Config Dual

1N4148W-7-F

Small Signal Diode, Single, 100 V, 300 Ma, 1.25 V, 4 Ns, 2 A Rohs Compliant: Yes

BAV99,215

Rectifier Diode, 1 Phase, 2 Element, 0.215A, 100V V(RRM), Silicon, TO-236AB

BAV99LT1G

DUAL SERIES SWITCHING DIODE Rectifier Diode, 2 Element, 0.215A, 100V V(RRM), Silicon, TO-236