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NexperiaBAS316,115

NexperiaBAS316,135

Price @ 1000

$ 0.027

$ 0.028

Stock

18,602,393

4,891,023

Authorized Distributors

Mount

Surface Mount

Case/Package

Forward Voltage

1.25 V

Reverse Voltage (DC)

Average Rectified Current

250 mA

Max Reverse Leakage Current

1 µA

Reverse Recovery Time

4 ns

Lieferkette

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.10.00.70

Introduction Date1997-12-05

Lifecycle StatusProduction (Last Updated: 2 years ago)

Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

Beschreibungen

Beschreibungen von Nexperia BAS316,115, die von den Distributoren bereitgestellt werden.

DIODE GEN PURP 100V 250MA SOD323 / Diode Switching 100V 0.25A Automotive 2-Pin SOD-323 T/R

Win Source

Rectifier Diode, 1 Phase, 1 Element, 0.25A, 100V V(RRM), Silicon

IHS

BAS16 Series 100 V 250 mA Surface Mount High Speed Switching Diode - SOD-323

Future Electronics

Rectifier Diodes & Bridges; BAS316,115; NEXPERIA; 2; 250 mA; 100 V; 500 nA

Maritex

DIODE, SWITCHING, 250MA, 100V, SOD-323; Diode Type:Switching; Forward Current If(AV):250mA; Repetitive Reverse Voltage Vrrm Max:100V; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:4A; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Diode Case Style:SOD-323; No. of Pins:2; MSL:-; SVHC:No SVHC (20-Jun-2013)

Farnell

Configuration = Single / Reverse Repetitive Voltage Max. (Vrrm) V = 100 / Peak Average Forward Current (If(AV)) mA = 250 / Forward Voltage (Vf) V = 1 / Peak Non-Repetitive Surge Current (Itsm) A = 4 / Peak Reverse Current uA = 50 / Reverse Recovery Time (trr) ns = 4 / Power Dissipation (Pd) mW = 400 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = SOD-323 / Pins = 2 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Capacitance pF = 1.5 / Thermal Resistance K/W = 150

Distrelec

Bilder

Aliasnamen des Herstellers

Nexperia verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Nexperia ist möglicherweise auch unter den folgenden Namen bekannt:

Nexperia USA Inc
NEXPER
Nexperia BV
NXP/NEXPERIA
Nexperia USA
NEXP
Nexperi
NEXPERIA / NXP
Nexperia Inc
Nexperia/NXP Semiconductors
NEXPERIA(Nexperia)
NEXPERIA/NXP SEMICONDUCTOR
Nexperia(Ahn Se)
Nexperia Semiconductors Taiwan Ltd
NEXPERIA/N
NEXPERIA/PHILIPS
NEXPERIA USA INC (UA)
NEX-NXP
NEXPERIA USA INC (VA)
NEXPERIA (FORMERLY NXP) (4001801)

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

"BAS316,115"
BAS316,115.
BAS316115

Bestandsverlauf

3-Monats-Trend: Restocked

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Alternative Teile

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Technische Spezifikationen

Physical

Case/PackageSC

Contact PlatingTin

MountSurface Mount

Number of Pins2

Number of Terminals2

Weight4.535924 g

Technical

Ambient Temperature Range High150 °C

Average Rectified Current250 mA

Capacitance1.5 pF

Current25 A

Element ConfigurationSingle

Forward Current250 mA

Forward Voltage1.25 V

Max Forward Surge Current (Ifsm)4 A

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Max Output Current250 mA

Max Power Dissipation400 mW

Max Repetitive Reverse Voltage (Vrrm)100 V

Max Reverse Leakage Current1 µA

Max Reverse Voltage (DC)100 V

Max Surge Current4 A

Min Operating Temperature-65 °C

Number of Elements1

Peak Non-Repetitive Surge Current4 A

Peak Reverse Current500 nA

Power Dissipation400 mW

Recovery Time4 ns

Reverse Recovery Time4 ns

Reverse Standoff Voltage80 V

Reverse Voltage100 V

Schedule B8541100070

Voltage100 V

Dimensions

Height1.1 mm

Length6.35 mm

Width6.35 mm

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für Nexperia BAS316,115 herunter.