onsemi RFD3055LE
EOL
In StockTechnical Specifications
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight343.08 mg
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance107 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance350 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation38 W
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
Power Dissipation38 W
Rds On Max107 mΩ
Recovery Time66 ns
Resistance107 mΩ
Rise Time105 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time22 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)60 V
Dimensions
Height6.3 mm
Length6.8 mm
Width2.5 mm
Inventory History
3 month trend: -99.16%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi RFD3055LE.
onsemi
Future Electronics
Jameco
Arrow Electronics
iiiC
TME
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.232
$ 0.164
Stock
344,130
381,022
Authorized Distributors
2
2
Mount
Through Hole
Through Hole
Case/Package
TO-251-3
TO-251-3
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
11 A
12 A
Threshold Voltage
3 V
-
Rds On Max
107 mΩ
150 mΩ
Gate to Source Voltage (Vgs)
16 V
20 V
Power Dissipation
38 W
53 W
Input Capacitance
350 pF
300 pF
Supply Chain
Lifecycle StatusEOL (Last Updated: 6 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi RFD3055LE.
Related Parts
onsemiHUFA76407D3
12 A 60 V 0.117 ohm N-CHANNEL Si POWER MOSFET TO-251AA
onsemiHUF76407D3
MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch
onsemiFQU13N06LTU
MOSFET Transistor, N Channel, 11 A, 60 V, 0.092 ohm, 10 V, 2.5 V
Descriptions
Descriptions of onsemi RFD3055LE provided by its distributors.
N-Channel Logic Level Power MOSFET 60V, 11A, 107mΩ
N-Channel 60 V 0.107 Ohm Through Hole Logic Level Power Mosfet - TO-251AA
Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET Operating temperature: -55...175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 38 W
These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49158.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -99.16%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight343.08 mg
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance107 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance350 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation38 W
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
Power Dissipation38 W
Rds On Max107 mΩ
Recovery Time66 ns
Resistance107 mΩ
Rise Time105 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time22 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)60 V
Dimensions
Height6.3 mm
Length6.8 mm
Width2.5 mm
Documents
Download datasheets and manufacturer documentation for onsemi RFD3055LE.
onsemi
Future Electronics
Jameco
Arrow Electronics
iiiC
TME
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements