MOSFETs

Metal oxide field effect transistors

Metal oxide field effect transistors are three-terminal semiconductor devices (Drain, Source, Gate) in which the voltage-current characteristics of the output port (Drain, Source) are controlled by the voltage applied to the input port (Gate, Source). MOSFETs may be n-channel or p-channel both types having similar characteristics except for the terminal polarization.

Explore MOSFETs

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Single N-Channel 100 V 0.16 Ohms Flange Mount Power Mosfet - TO-220-3
Mosfet, Power; N-ch; Vdss 55V; Rds(on) 4.6MILLIOHMS; Id 169A; TO-220AB; Pd 330W; -55DE
Mosfet, Power; N-ch; Vdss 75V; Rds(on) 2.8MILLIOHMS; Id 210A; TO-220AB; Pd 370W; -55DE
Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.008 Ohm; Id 110A; TO-247AC; Pd 200W; Vgs +/-20V
Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-247AC
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; TO-220AB; PD 200W; gFS 44S
Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.04 Ohm; Id 50A; TO-247AC; Pd 300W; Vgs +/-20V
Transistor MOSFET N Channel 100 Volt 57 Amp 3-Pin 3+ Tab TO-220AB
Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.14 Ohm; Id 2.8A; SOT-223; Pd 2.1W; Vgs +/-16V
Mosfet, Power; N-ch; Vdss 100V; Rds(on) 90MILLIOHMS; Id 17A; D2PAK; Pd 70W; Vgs +/-20V