由其分销商提供的 Vishay SIRA00DP-T1-GE3 的描述。
MOSFET, 30V, 60A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Curr
Single N-Channel 30 V 4 mOhm SMT TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8
SEMICONCUCTOR, MOSFET;TRENCHFET;N-CHANNEL;30V;60A;1MOHM @ 10V;POWERPAK SO-8
MOSFET N-Channel, VDS=40V, VGS=20V, RDSon 0.88mohm@10V, PowerPAK SO-8
30V 100A 6.25W 1m´Î@10V20A 2.2V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS
Trans MOSFET N-CH 30V 100A 8-Pin PowerPAK SO T/R
MOSFET N-CH 30V 100A PPAK SO-8
Power Field-Effect Transistor, 100A I(D), 30V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Vishay NMOS TrenchFET, Vds=30 V, 100 A, PowerPAK SO-8, , 8
MOSFET, N-CH, 30V, 100A, 150DEG C, 104W; Transistor Polarity: N Channel; Drain Source Voltage Vds: 30V; Continuous Drain Current Id: 100A; On Resistance Rds(on): 830µohm; Transistor Mounting: Surface Mount; Rds(on) Test Voltage Vgs: 10V
MOSFET N-Ch 30V 58A PowerPAK SO8