Vishay SIRA04DP-T1-GE3

Name: Vishay SIRA04DP-T1-GE3
Brand: Vishay
SKU: SIRA04DP-T1-GE3

MOSFET, 30V, 40A, PPAKSO-8; Transistor Polarity: N Channel; Continuous Drain Curr

$ 0.618

NRND

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
DigiKey	2	SIRA04DP-T1-GE3CT-ND	529	1	Cut Tape	1.990	1.267	0.853	0.618	0.618
TTI		SIRA04DP-T1-GE3	9,000	3K	Tape & Reel					0.468	7h
TME	2	SIRA04DP-T1-GE3	0	1		1.810	1.253	0.803	0.668	0.668	3h
Newark		SIRA04DP-T1-GE3	0	3K	Tape & Reel					0.707
Avnet		SIRA04DP-T1-GE3	0	3K						0.468	5d

数据表和文档

下载 Vishay SIRA04DP-T1-GE3 的数据表和制造商文档。

IHS

Datasheet13 页10 年前

Farnell

Newark

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

-26.19%

CAD 模型

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供应链

Lifecycle StatusNRND (Last Updated: 2 months ago)

描述

由其分销商提供的 Vishay SIRA04DP-T1-GE3 的描述。

MOSFET, 30V, 40A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Curr

Newark

Single N-Channel 30 V 2.15 mOhm TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8

Future Electronics

Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK SO-8

Jak Electronics

Power MOSFET, N Channel, 30 V, 40 A, 0.00215 ohm, PowerPAK SO, Surface Mount

Avnet

N-CHANNEL 30 V (D-S) MOSFET Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, 30V, 40A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:27.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

Farnell