Vishay SIR414DP-T1-GE3

MOSFET, N CH, 40V, 50A, POWERPAK SO; Transistor Polarity: N Channel; Continuous D
$ 0.81
NRND
制造商页面数据表

价格与库存

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DistributorSKUMinPkg
NewarkSIR414DP-T1-GE31,6391
VericalSIR414DP-T1-GE33,0003K
Arrow ElectronicsSIR414DP-T1-GE33,0003K
RutronikTMOSP1094612,0003K
8h
DigiKey
3
SIR414DP-T1-GE3CT-ND6,4971Cut Tape

数据表和文档

下载 Vishay SIR414DP-T1-GE3 的数据表和制造商文档。

Newark

Datasheet13 页10 年前
Datasheet13 页10 年前
Datasheet13 页10 年前
Datasheet13 页11 年前

Farnell

Arrow Electronics

库存历史记录

3 个月趋势:
-7.58%
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供应链

Lifecycle StatusNRND (Last Updated: 4 months ago)

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描述

由其分销商提供的 Vishay SIR414DP-T1-GE3 的描述。

MOSFET, N CH, 40V, 50A, POWERPAK SO; Transistor Polarity:N Channel; Continuous D
Newark
Single N-Channel 40 V 0.0028 Ohm SMT TrenchFET Power Mosfet - PowerPak-SO-8
Future Electronics
5.4W(Ta),83W(Tc) 20V 2.5V@ 250¦ÌA 117nC@ 10 V 1N 40V 2.8m¦¸@ 20A,10V 50A 4.75nF@20V SO
UnikeyIC
Trans MOSFET N-CH 40V 33A 8-Pin PowerPAK SO EP T/R
Verical
Power Field-Effect Transistor, 33A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
MOSFET, N CH, 40V, 50A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
Farnell

图片

Vishay
Farnell
Farnell
Farnell
Future Electronics

制造商别名

Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：

  • VIS
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  • VSHAY
  • VISH/IR
  • VSHY
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  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY ELECTRONIC
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
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