Infineon IRLHM630TRPBF

Name: Infineon IRLHM630TRPBF
Brand: Infineon
SKU: IRLHM630TRPBF

INFINEON IRLHM630TRPBF MOSFET Transistor, N Channel, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV

$ 0.294

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRLHM630TRPBF	938,538					0.513	0.426	0.380	20h
DigiKey	2	IRLHM630TRPBFCT-ND	12	1	Cut Tape	1.970	1.249	1.249	1.249	1.249
Arrow Electronics	2	IRLHM630TRPBF	1,799	1		1.537	1.076	1.076	1.076	1.076
RS (Formerly Allied Electronics)		IRLHM630TRPBF	0	4K	Bulk					2.060	8h
Microchip USA		IRLHM630TRPBF	2,858	600					1.224	1.224	4d

数据表和文档

下载 Infineon IRLHM630TRPBF 的数据表和制造商文档。

Farnell

Datasheet10 页10 年前

IHS

ODG (Origin Data Global)

element14 APAC

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

+0.00%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-11-03

Lifecycle StatusObsolete (Last Updated: 5 months ago)

描述

由其分销商提供的 Infineon IRLHM630TRPBF 的描述。

INFINEON IRLHM630TRPBF MOSFET Transistor, N Channel, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV

Fly-Wing Technology

30V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS

Infineon SCT

Single N-Channel 20 V 4.5 mOhm 41 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

Future Electronics

Battery Operated DC Motor Inverter MOSFET | MOSFET N-CH 30V 21A PQFN

Win Source

Power MOSFET, N Channel, 30 V, 21 A, 0.0028 ohm, QFN, Surface Mount

Avnet

HEXFET POWER MOSFET Power Field-Effect Transistor, 21A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2800µohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:12V

Farnell

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 12 / Fall Time ns = 43 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 9.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 37

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