价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SIHB12N65E-GE3-ND | 3,316 | 1 | Tube | ||||||||
| TME | SIHB12N65E-GE3 | 0 | 1 | 16h | ||||||||
| TTI | SIHB12N65E-GE3 | 0 | 1K | Tube | 20h | |||||||
| Newark | SIHB12N65E-GE3 | 0 | 1 | |||||||||
| Future Electronics | SIHB12N65E-GE3 | 0 | 50 | Tube |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-06-25
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
STMicroelectronicsSTB13N60M2
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in D2PAK package
描述
由其分销商提供的 Vishay SIHB12N65E-GE3 的描述。
E Series N-Channel 650 V 380 mO 35 nC Surface Mount Power Mosfet - D2PAK
Trans MOSFET N-CH 650V 12A 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 650V, 12A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.33ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Powe
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
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- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage700 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.224 nF
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation156 W
Rds On Max380 mΩ
Rise Time19 ns
Turn-Off Delay Time35 ns
Turn-On Delay Time16 ns