Vishay SIHB12N50E-GE3

Trans MOSFET N-CH 500V 10.5A 3-Pin(2+Tab) D2PAK
$ 1.121
Production
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TTISIHB12N50E-GE301KTube
10h
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10h
TTI AsiaSIHB12N50E-GE3联系方式
11h
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11h

数据表和文档

下载 Vishay SIHB12N50E-GE3 的数据表和制造商文档。

Farnell

Datasheet9 页11 年前
Datasheet7 页11 年前

Newark

Future Electronics

库存历史记录

3 个月趋势:
-1.75%
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供应链

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-01-19
Lifecycle StatusProduction (Last Updated: 4 months ago)

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描述

由其分销商提供的 Vishay SIHB12N50E-GE3 的描述。

Trans MOSFET N-CH 500V 10.5A 3-Pin(2+Tab) D2PAK
Verical
Single N-Channel 500 V 0.38 Ohm 50 nC 114 W Silicon Mosfet - TO-263-3
Future Electronics
VISHAY SIHB12N50E-GE3 MOSFET, N CHANNEL, 500V, 10.5A, TO-263-3
Jak Electronics
Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IHS
MOSFET, N CHANNEL, 500V, 10.5A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.33ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 114W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited
Farnell

图片

Vishay
Farnell
Future Electronics
Farnell

制造商别名

Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：

  • VIS
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  • VISHAY INTERTECHNOLOGY INC
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  • VISHAY ELECTRONIC
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
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