备用零件
Price @ 1000
$ 0.196
$ 0.359
Stock
197,491
2,468,413
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SO
Drain to Source Voltage (Vdss)
-
-20 V
Continuous Drain Current (ID)
4 A
4 A
Threshold Voltage
-1.4 V
-1.4 V
Rds On Max
235 mΩ
58 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
-
2 W
Input Capacitance
665 pF
665 pF
供应链
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-08-08
Lifecycle StatusProduction (Last Updated: 5 months ago)
描述
由其分销商提供的 Vishay SI9933CDY-T1-E3 的描述。
Si9933CDY Series Dual P-Channel 20 V 58 mOhm Surface Mount Power Mosfet - SOIC-8
2W 12V 1.4V@ 250¦ÌA 26nC@ 10V 2P 20V 58m¦¸@ 4.8A,4.5V 4A 665pF@10V SOIC-8 1.55mm
20V 4A 58m´Î@4.5V4.8A 3.1W 1.4V@250Ã×A 2 P-Channel SOIC-8_150mil MOSFETs ROHS
MOSFET, PP CH, 20V, 8SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.4V; Power Dissipation Pd:3.1W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-50°C to +150°C
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)4 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance58 mΩ
Element ConfigurationDual
Fall Time13 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance665 pF
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage20 V
Min Operating Temperature-50 °C
Number of Channels2
Number of Elements2
Rds On Max235 mΩ
Resistance58 MΩ
Rise Time50 ns
Schedule B8541290080
Threshold Voltage-1.4 V
Turn-Off Delay Time29 ns
Turn-On Delay Time21 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm