Infineon IRF7307PBF

Name: Infineon IRF7307PBF
Brand: Infineon
SKU: IRF7307PBF

Dual N/P-Channel 20 V 0.05/0.09 Ohm 20/22 nC HEXFET® Power Mosfet - SOIC-8

$ 0.74

Obsolete

制造商页面数据表

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7307PBF	0	1	Bulk	0.830	0.740	0.740	0.740	0.740	12h
Farnell	IRF7307PBF	0	1		0.477*	0.468*	0.459*	0.430*	0.421*	6h
Win Source	WS-IRF7307PBF	10,660	6			9.604	6.403	6.403	6.403	21h
Worldway Electronics	IRF7307PBF	19,188	7	Tube		0.895	0.868	0.822	0.822	20h
Antdic Electronics	IRF7307PBF	34,288			12.000	11.400	10.800	9.600	9.000	5d

数据表和文档

下载 Infineon IRF7307PBF 的数据表和制造商文档。

Newark

Datasheet10 页21 年前

IHS

TME

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1995-07-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

描述

由其分销商提供的 Infineon IRF7307PBF 的描述。

Dual N/P-Channel 20 V 0.05/0.09 Ohm 20/22 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

Trans MOSFET N/P-CH 20V 5.7A/4.7A 8-Pin SOIC Tube

Verical

HEXFET POWER MOSFET Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:5.7A; On Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Cont Current Id N Channel 2:5.2A; Cont Current Id P Channel:4.3A; Current Id Max:5.7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance N Channel Max:50mohm; On State Resistance P Channel Max:90mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:17A; Pulse Current Idm N Channel 2:21A; Pulse Current Idm P Channel:17A; Row Pitch:6.3mm; SMD Marking:F7307; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:700mV

element14 APAC