备用零件
Price @ 1000
$ 1.65
$ 1.596
Stock
420,937
312,570
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
-100 V
-100 V
Continuous Drain Current (ID)
28 A
28 A
Threshold Voltage
-3 V
-3 V
Rds On Max
41 mΩ
41 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
5.2 W
5.2 W
Input Capacitance
4.6 nF
4.6 nF
供应链
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-12-02
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
InfineonIRF7241TRPBF
MOSFET, Power;P-Ch;VDSS -40V;RDS(ON) 25Milliohms;ID -6.2A;SO-8;PD 2.5W;VGS +/-2
InfineonIRF7241PBF
MOSFET, Power;P-Ch;VDSS -40V;RDS(ON) 25Milliohms;ID -6.2A;SO-8;PD 2.5W;VGS +/-2
VishaySI7430DP-T1-GE3
Single N-Channel 150 V 0.045 Ohm Surface Mount Power Mosfet - PowerPAK SO-8
描述
由其分销商提供的 Vishay SI7489DP-T1-GE3 的描述。
Si7489DP Series 100 V 0.041 Ohm SMT P-Channel MOSFET - PowerPAK SO-8
Power MOSFET, P Channel, 100 V, 28 A, 0.033 ohm, PowerPAK SO, Surface Mount
P CHANNEL MOSFET, -100V, 28A, SOIC; TRAN; P CHANNEL MOSFET, -100V, 28A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-28A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):47mohm; Rds(on) Test Vo
P Channel Mosfet, -100V, 28A, Soic, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3Vrohs Compliant: No |Vishay SI7489DP-T1-GE3.
MOSFET, P CH, 100V, 28A, POWERPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-28A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:83W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance41 mΩ
Drain to Source Voltage (Vdss)-100 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.6 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Channels1
Number of Elements1
Power Dissipation5.2 W
Rds On Max41 mΩ
Rise Time160 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time110 ns
Turn-On Delay Time15 ns
Dimensions
Height1.12 mm
Length4.9 mm
Width5.89 mm