Infineon IRF7241PBF

Name: Infineon IRF7241PBF
Brand: Infineon
SKU: IRF7241PBF

Mosfet, Power; P-ch; Vdss -40V; Rds(on) 25MILLIOHMS; Id -6.2A; SO-8; Pd 2.5W; Vgs +/-2

$ 0.76

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7241PBF	0	1	Bulk	0.870	0.760	0.760	0.760	0.760	20h
Win Source	WS-IRF7241PBF	91,970	27				1.682	1.447	1.447	8h
Worldway Electronics	IRF7241PBF	16,226	7	Tube		0.806	0.790	0.760	0.745	8h
Anlinkda	IRF7241PBF	58,772			0.102	0.092	0.083	0.080	0.079	7h
Fly-Wing Technology	IRF7241PBF	23,713			0.538	0.441	0.428	0.400	0.400	6h

数据表和文档

下载 Infineon IRF7241PBF 的数据表和制造商文档。

IHS

Datasheet10 页21 年前

Datasheet9 页21 年前

TME

RS (Formerly Allied Electronics)

iiiC

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IRF7241PBF 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2001-01-31

Lifecycle StatusObsolete (Last Updated: 2 months ago)

描述

由其分销商提供的 Infineon IRF7241PBF 的描述。

MOSFET, Power;P-Ch;VDSS -40V;RDS(ON) 25Milliohms;ID -6.2A;SO-8;PD 2.5W;VGS +/-2

RS (Formerly Allied Electronics)

Single P-Channel 40 V 41 mOhm 80 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Trans MOSFET P-CH 40V 6.2A 8-Pin SOIC Tube

Verical

-40V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

Small Signal Field-Effect Transistor, 6.2A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:40V; On Resistance Rds(on):41mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-6.2A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:25A; SMD Marking:F7241; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:-40V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:-10V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Infineon